Communication systems and continuously increasing transmission of information through different channels, today in 4G and after
tomorrow in 5G and beyond in close future, require more and more technology breakthrough.
This implies more and more radio frequency (RF) bands and more complex RF circuits without increasing the total size of the systems.
Conventional RF filters based on Surface Acoustic Wave (SAW) are limited to 3,5 GHz operational frequency. Thin Film Bulk Acoustic
Resonator (TFBAR) based on nitrate of aluminium films, are limited to their electromechanical coupling (7,5%) limiting their operational
frequency to 4 GHz. Thus, new suitable low loss materials are needed with larger electromechanical coupling to achieve larger bandwidth and
This invention concerns Film Bulk Acoustic Resonator (FBAR) filters or Spectral Multiband Resonator (SMR) filters.
The innovation proposes the direct layer deposition of LiNbO3, LiTaO3 and their derivatives with 33°Y and X- orientations on Si substrates.
33°Y- and X- orientation of LiNbO3 presents particular interest for the applications based on volume acoustic waves (BAW).
Their high electromechanical coupling will allow to achieve large passband (> 10 %) of BAW filters operating at frequencies >= 5 GHz or
to fabricate filters with tunable frequencies at standard operational frequencies (around 2 – 3 GHz).
Able to operate at standard frequencies (2-3 GHz) and frequency ≥ 5GHz (up to 10GHz by adjusting the thickness film) and/or with
relative bandwidth in excess of 10%.
Epitaxial process allowing very good control of the film thicknesses
Direct layer deposition optimizing step in process run
Compatibility with TFBAR and SMR standard processing
MARKETS & APPLICATIONS
Information & Communication
Technology demonstrated in a simulated environment (TRL 5)
Patent under deposition
Business Development Manager
+33 (0)6 26 61 89 06