The technology developed by the laboratory aims to provide infrared detectors in double-metal patch geometry. In this type of geometry, the absorbing zone is inserted between two metal layers, which form a microcavity that can also act as an antenna for infrared radiation. This geometry allows an increased responsiveness and a significant reduction of the detector’s dark current. In addition, the technology has a very high operating temperature limit compared to competing solutions, ease of production and high spatial uniformity.
Keywords: Infrared detection, Dark current, Temperature BLIP, Cryogenic temperature operation, Semiconductor detectors